FQP3N60C
Manufacturer:
On Semiconductor
Mfr.Part #:
FQP3N60C
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 75 W 600 V Continuous Drain Current (ID):3 A 14 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Resistance | 3.4 Ω |
| Packaging | Tube |
| RoHS | Compliant |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 75 W |
| Power Dissipation | 75 W |
| Number of Channels | 1 |
| Input capacitance | 565 pF |
| Continuous Drain Current (ID) | 3 A |
| Rds On Max | 3.4 Ω |
| Drain to Source Voltage (Vdss) | 600 V |
| Turn-On Delay Time | 12 ns |
| Turn-Off Delay Time | 35 ns |
| Element Configuration | Single |
| Fall Time | 35 ns |
| Rise Time | 30 ns |
| Gate Charge | 14 nC |
| Drain to Source Resistance | 3.4 Ω |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
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